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RFD14N05SM9A
Typical Performance Curves
Unless Otherwise Specified (Continued)
50
10
STARTING T J = 25 o C
35
30
25
20
V GS = 20V
V GS = 10V
V GS = 8V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 7V
STARTING T J = 150 o C
15
10
V GS = 6V
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS -V DD ) +1]
5
V GS = 5V
V GS = 4.5V
1
0.01
0.1
1
10
0
0
2
4 6
8
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
35
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
-55 o C
-25 o C
175 o C
2.0
1.5
I D = 250 μ A
20
1.0
15
10
5
0.5
0
0
2
4
6
8
10
0
-80
-40
0
40
80
120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2.0
V GS = V DS , I D = 250 μ A
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V, ID = 14A
1.5
1.5
1.0
1.0
0.5
0.5
0
0
-80
-40
0 40 80 120 160
200
-80
-40
0 40 80 120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
?2004 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD14N05SM 9A Rev. C1
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